High-Performance Green and Yellow LEDs Grown on SiO2 Nanorod Patterned GaN/Si Templates
Identifieur interne : 000B98 ( Main/Repository ); précédent : 000B97; suivant : 000B99High-Performance Green and Yellow LEDs Grown on SiO2 Nanorod Patterned GaN/Si Templates
Auteurs : RBID : Pascal:13-0240492Descripteurs français
- Pascal (Inist)
- Haute performance, Lumière verte, Diode électroluminescente, Lumière jaune, Nanobâtonnet, Méthode MOCVD, Densité élevée, Addition étain, Gravure sèche, Densité dislocation, Echelle nanométrique, Croissance latérale, Epitaxie, Système tampon, Etat localisé, Evaluation performance, Nanotechnologie, Oxyde de silicium, Nitrure de gallium, Composé binaire, Oxyde d'indium, Composé ternaire, Nitrure d'indium, Puits quantique multiple, Fabrication microélectronique, Matériau dopé, 8107, 8115G, 8107S, SiO2, GaN, ITO, InGaN.
- Wicri :
- concept : Nanotechnologie.
English descriptors
- KwdEn :
- Binary compound, Buffer system, Dislocation density, Doped materials, Dry etching, Epitaxy, Gallium nitride, Green light, High density, High performance, Indium nitride, Indium oxide, Lateral growth, Light emitting diode, Localized state, MOCVD, Microelectronic fabrication, Multiple quantum well, Nanometer scale, Nanorod, Nanotechnology, Performance evaluation, Silicon oxides, Ternary compound, Tin addition, Yellow light.
Abstract
High-performance GaN-based green and yellow light-emitting diodes (LEDs) are grown on SiO2 nanorod patterned GaN/Si templates by metalorganic chemical vapor deposition. The high-density SiO2 nanorods are prepared by nonlithographic HCl-treated indium tin oxide and dry etching. The dislocation density of GaN is significantly reduced by nanoscale epitaxial lateral overgrowth. In addition to the much improved green LED (505 and 530 nm) results, the fabricated yellow (565 nm) InGaN/GaN-based multiquantum well (MQW) LEDs on Si substrates are demonstrated for the first time. High-quality GaN buffer and localized states in MQWs are correlated to obtaining high-efficiency long-wavelength emission in our devices.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">High-Performance Green and Yellow LEDs Grown on SiO<sub>2</sub> Nanorod Patterned GaN/Si Templates</title><author><name>XINBO ZOU</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology</s1><s2>Kowloon 999077</s2><s3>HKG</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Hong Kong</country><wicri:noRegion>Kowloon 999077</wicri:noRegion></affiliation></author><author><name>KA MING WONG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology</s1><s2>Kowloon 999077</s2><s3>HKG</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Hong Kong</country><wicri:noRegion>Kowloon 999077</wicri:noRegion></affiliation></author><author><name>XUELIANG ZHU</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology</s1><s2>Kowloon 999077</s2><s3>HKG</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Hong Kong</country><wicri:noRegion>Kowloon 999077</wicri:noRegion></affiliation></author><author><name>WING CHEUNG CHONG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology</s1><s2>Kowloon 999077</s2><s3>HKG</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Hong Kong</country><wicri:noRegion>Kowloon 999077</wicri:noRegion></affiliation></author><author><name>JUN MA</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology</s1><s2>Kowloon 999077</s2><s3>HKG</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Hong Kong</country><wicri:noRegion>Kowloon 999077</wicri:noRegion></affiliation></author><author><name>KEI MAY LAU</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology</s1><s2>Kowloon 999077</s2><s3>HKG</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Hong Kong</country><wicri:noRegion>Kowloon 999077</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0240492</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0240492 INIST</idno><idno type="RBID">Pascal:13-0240492</idno><idno type="wicri:Area/Main/Corpus">000A45</idno><idno type="wicri:Area/Main/Repository">000B98</idno></publicationStmt><seriesStmt><idno type="ISSN">0741-3106</idno><title level="j" type="abbreviated">IEEE electron device lett.</title><title level="j" type="main">IEEE electron device letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compound</term><term>Buffer system</term><term>Dislocation density</term><term>Doped materials</term><term>Dry etching</term><term>Epitaxy</term><term>Gallium nitride</term><term>Green light</term><term>High density</term><term>High performance</term><term>Indium nitride</term><term>Indium oxide</term><term>Lateral growth</term><term>Light emitting diode</term><term>Localized state</term><term>MOCVD</term><term>Microelectronic fabrication</term><term>Multiple quantum well</term><term>Nanometer scale</term><term>Nanorod</term><term>Nanotechnology</term><term>Performance evaluation</term><term>Silicon oxides</term><term>Ternary compound</term><term>Tin addition</term><term>Yellow light</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Haute performance</term><term>Lumière verte</term><term>Diode électroluminescente</term><term>Lumière jaune</term><term>Nanobâtonnet</term><term>Méthode MOCVD</term><term>Densité élevée</term><term>Addition étain</term><term>Gravure sèche</term><term>Densité dislocation</term><term>Echelle nanométrique</term><term>Croissance latérale</term><term>Epitaxie</term><term>Système tampon</term><term>Etat localisé</term><term>Evaluation performance</term><term>Nanotechnologie</term><term>Oxyde de silicium</term><term>Nitrure de gallium</term><term>Composé binaire</term><term>Oxyde d'indium</term><term>Composé ternaire</term><term>Nitrure d'indium</term><term>Puits quantique multiple</term><term>Fabrication microélectronique</term><term>Matériau dopé</term><term>8107</term><term>8115G</term><term>8107S</term><term>SiO2</term><term>GaN</term><term>ITO</term><term>InGaN</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Nanotechnologie</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">High-performance GaN-based green and yellow light-emitting diodes (LEDs) are grown on SiO<sub>2</sub> nanorod patterned GaN/Si templates by metalorganic chemical vapor deposition. The high-density SiO<sub>2</sub> nanorods are prepared by nonlithographic HCl-treated indium tin oxide and dry etching. The dislocation density of GaN is significantly reduced by nanoscale epitaxial lateral overgrowth. In addition to the much improved green LED (505 and 530 nm) results, the fabricated yellow (565 nm) InGaN/GaN-based multiquantum well (MQW) LEDs on Si substrates are demonstrated for the first time. High-quality GaN buffer and localized states in MQWs are correlated to obtaining high-efficiency long-wavelength emission in our devices.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0741-3106</s0></fA01><fA02 i1="01"><s0>EDLEDZ</s0></fA02><fA03 i2="1"><s0>IEEE electron device lett.</s0></fA03><fA05><s2>34</s2></fA05><fA06><s2>7</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>High-Performance Green and Yellow LEDs Grown on SiO<sub>2</sub> Nanorod Patterned GaN/Si Templates</s1></fA08><fA11 i1="01" i2="1"><s1>XINBO ZOU</s1></fA11><fA11 i1="02" i2="1"><s1>KA MING WONG</s1></fA11><fA11 i1="03" i2="1"><s1>XUELIANG ZHU</s1></fA11><fA11 i1="04" i2="1"><s1>WING CHEUNG CHONG</s1></fA11><fA11 i1="05" i2="1"><s1>JUN MA</s1></fA11><fA11 i1="06" i2="1"><s1>KEI MAY LAU</s1></fA11><fA14 i1="01"><s1>Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology</s1><s2>Kowloon 999077</s2><s3>HKG</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>903-905</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>222V</s2><s5>354000503093440260</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>13 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0240492</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>IEEE electron device letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>High-performance GaN-based green and yellow light-emitting diodes (LEDs) are grown on SiO<sub>2</sub> nanorod patterned GaN/Si templates by metalorganic chemical vapor deposition. The high-density SiO<sub>2</sub> nanorods are prepared by nonlithographic HCl-treated indium tin oxide and dry etching. The dislocation density of GaN is significantly reduced by nanoscale epitaxial lateral overgrowth. In addition to the much improved green LED (505 and 530 nm) results, the fabricated yellow (565 nm) InGaN/GaN-based multiquantum well (MQW) LEDs on Si substrates are demonstrated for the first time. High-quality GaN buffer and localized states in MQWs are correlated to obtaining high-efficiency long-wavelength emission in our devices.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F15</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A07Z</s0></fC02><fC02 i1="03" i2="X"><s0>001D03F17</s0></fC02><fC02 i1="04" i2="3"><s0>001B80A15G</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Haute performance</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>High performance</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Alto rendimiento</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Lumière verte</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Green light</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Luz verde</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Diode électroluminescente</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Light emitting diode</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Diodo electroluminescente</s0><s5>03</s5></fC03><fC03 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